Technical parameters/dissipated power: 800 mW
Technical parameters/voltage regulation value: 3.6V ~ 200V
Technical parameters/regulated current: 5-100mA
Encapsulation parameters/Encapsulation: DO-219AB
External dimensions/packaging: DO-219AB
Other/Minimum Packaging: 10000
Compliant with standards/RoHS standards: Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BZD27C3V6P-E3-08
|
Vishay Semiconductor | 类似代替 | DO-219AB |
VISHAY BZD27C3V6P-E3-08 单管二极管 齐纳, BZD, 3.6 V, 800 mW, DO-219AB, 5 %, 2 引脚, 150 °C
|
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