Technical parameters/rated current: 25.0 A
Technical parameters/breakdown voltage: 38.0 V
Technical parameters/dissipated power: 800 mW
Technical parameters/test current: 25 mA
Technical parameters/voltage regulation value: 33 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-219AB
External dimensions/packaging: DO-219AB
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BZD27C33P
|
Taiwan Semiconductor | 功能相似 | SMD |
TAIWAN SEMICONDUCTOR BZD27C33P 单管二极管 齐纳, 33 V, 800 mW, SMD, 2 引脚, 175 °C
|
||
BZD27C33PR2
|
Taiwan Semiconductor | 功能相似 |
Zener Diode, 33V V(Z), 6.06%, 1W, Silicon, Unidirectional, ROHS COMPLIANT, PLASTIC, SUB SMA, 2 PIN
|
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