Technical parameters/rated voltage (DC): 400 V
Technical parameters/rated current: 8.00 A
Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 400 V
Technical parameters/maximum allowable collector current: 6A
Technical parameters/minimum current amplification factor (hFE): 14 @500mA, 5V
Technical parameters/rated power (Max): 100 W
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BUJ105AB,118
|
We En Semiconductor | 功能相似 | TO-263-3 |
Buj105ab - Npn功率晶体管
|
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