Technical parameters/drain source resistance: 0.032 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 59 W
Technical parameters/threshold voltage: 1.5 V
Technical parameters/drain source voltage (Vds): 55 V
Technical parameters/Continuous drain current (Ids): 26.0 A
Technical parameters/rise time: 93 ns
Technical parameters/Input capacitance (Ciss): 1020pF @25V(Vds)
Technical parameters/rated power (Max): 59 W
Technical parameters/descent time: 72 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/dissipated power (Max): 59W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SOT-669
External dimensions/packaging: SOT-669
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BUK9Y40-55B
|
Nexperia | 类似代替 | 5 |
N沟道的TrenchMOS逻辑电平FET N-channel TrenchMOS logic level FET
|
||
BUK9Y40-55B
|
NXP | 类似代替 | SOT-669 |
N沟道的TrenchMOS逻辑电平FET N-channel TrenchMOS logic level FET
|
||
BUK9Y40-55B,115
|
NXP | 功能相似 | SOT-669 |
N沟道 VDS=55V VGS=2V ID=26A P=59W
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review