Technical parameters/rated voltage (DC): 450 V
Technical parameters/rated current: 8.00 A
Technical parameters/rated power: 125 W
Technical parameters/breakdown voltage (collector emitter): 450 V
Technical parameters/rated power (Max): 100 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N6128
|
Microsemi | 功能相似 | TO-61 |
TO-61 NPN 80V 10A
|
||
BD137-10
|
CDIL | 功能相似 |
1.5 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126
|
|||
|
|
Infineon | 功能相似 | TO-126 |
1.5 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126
|
||
BD137-10
|
Fairchild | 功能相似 |
1.5 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126
|
|||
BD137-10
|
NXP | 功能相似 | SIP |
1.5 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126
|
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