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Model BUT90
Description High power NPN silicon transistor
Product QR code
Brand: ST Microelectronics
Packaging TO-204
Delivery time
Packaging method Tube
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6843) Minimum order quantity(1)
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Technical parameters/rated voltage (DC): 125 V

Technical parameters/rated current: 50.0 A

Technical parameters/rated power: 250 W

Technical parameters/breakdown voltage (collector emitter): 125 V

Technical parameters/rated power (Max): 250 W

Technical parameters/operating temperature (Max): 200 ℃

Technical parameters/operating temperature (Min): -65 ℃

Technical parameters/dissipated power (Max): 250000 mW

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-204

External dimensions/packaging: TO-204

Physical parameters/materials: Silicon

Physical parameters/operating temperature: 200℃ (TJ)

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards:

Compliant with standards/lead standards: Lead Free

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