Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 7 mΩ
Technical parameters/dissipated power: 167 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30 V
Technical parameters/rise time: 85 ns
Technical parameters/Input capacitance (Ciss): 2245pF @25V(Vds)
Technical parameters/rated power (Max): 167 W
Technical parameters/descent time: 76 ns
Technical parameters/operating temperature (Max): 185 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 167W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.73 mm
External dimensions/width: 6.22 mm
External dimensions/height: 2.38 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 185℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BUK7207-30B,118
|
NXP | 类似代替 | TO-252-3 |
MOSFET N-CH 30V 75A DPAK
|
||
BUK7207-30B,118
|
Nexperia | 类似代替 | TO-252-3 |
MOSFET N-CH 30V 75A DPAK
|
||
PHD101NQ03LT,118
|
Nexperia | 类似代替 | TO-252-3 |
DPAK N-CH 30V 75A
|
||
PHD101NQ03LT,118
|
NXP | 类似代替 | TO-252-3 |
DPAK N-CH 30V 75A
|
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