Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 158W (Tc)
Technical parameters/drain source voltage (Vds): 75 V
Technical parameters/Continuous drain current (Ids): 45A
Technical parameters/rise time: 66 ns
Technical parameters/Input capacitance (Ciss): 2385pF @25V(Vds)
Technical parameters/rated power (Max): 158 W
Technical parameters/descent time: 41 ns
Technical parameters/dissipated power (Max): 158W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BUK7226-75A
|
Nexperia | 功能相似 | DPAK |
N沟道的TrenchMOS标准水平FET N-channel TrenchMOS standard level FET
|
||
BUK7226-75A
|
Philips | 功能相似 |
N沟道的TrenchMOS标准水平FET N-channel TrenchMOS standard level FET
|
|||
BUK7226-75A
|
NXP | 功能相似 | DPAK |
N沟道的TrenchMOS标准水平FET N-channel TrenchMOS standard level FET
|
||
BUK7226-75A,118
|
NXP | 功能相似 | TO-252-3 |
MOSFET N-CH 75V 45A DPAK
|
||
BUK9226-75A,118
|
Nexperia | 类似代替 | TO-252-3 |
NXP BUK9226-75A,118 晶体管, MOSFET, N沟道, 45 A, 75 V, 20.9 mohm, 10 V, 1.5 V
|
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