Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 700 V
Technical parameters/maximum allowable collector current: 8A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: ISOWATT-218
External dimensions/packaging: ISOWATT-218
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BU2508A
|
NXP | 功能相似 | SOT-93 |
硅扩散型功率晶体管 Silicon Diffused Power Transistor
|
||
BU2508AW
|
NXP | 功能相似 | TO-247 |
硅扩散型功率晶体管 Silicon Diffused Power Transistor
|
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