Technical parameters/breakdown voltage (collector emitter): 400 V
Technical parameters/rated power (Max): 60 W
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BU806
|
Thomas & Betts | 功能相似 |
t-Npn Si- Hiv Darlington
|
|||
|
|
Sensitron Semiconductor | 功能相似 | 4 |
t-Npn Si- Hiv Darlington
|
||
BU806
|
Central Semiconductor | 功能相似 | TO-220-3 |
t-Npn Si- Hiv Darlington
|
||
BU806
|
Fairchild | 功能相似 | TO-220-3 |
t-Npn Si- Hiv Darlington
|
||
BU807
|
ON Semiconductor | 功能相似 | TO-220 |
中压NPN快速切换达林顿晶体管 MEDIUM VOLTAGE NPN FAST SWITCHING DARLINGTON TRANSISTORS
|
||
BU807
|
Motorola | 功能相似 |
中压NPN快速切换达林顿晶体管 MEDIUM VOLTAGE NPN FAST SWITCHING DARLINGTON TRANSISTORS
|
|||
BU807
|
Boca Semiconductor | 功能相似 |
中压NPN快速切换达林顿晶体管 MEDIUM VOLTAGE NPN FAST SWITCHING DARLINGTON TRANSISTORS
|
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