Technical parameters/rated voltage (DC): 700 V
Technical parameters/rated current: 8.00 A
Technical parameters/rated power: 50 W
Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 700 V
Technical parameters/maximum allowable collector current: 8A
Technical parameters/minimum current amplification factor (hFE): 60 @5A, 5V
Technical parameters/rated power (Max): 52 W
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: ISOWATT-218-3
External dimensions/packaging: ISOWATT-218-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BU2508A
|
NXP | 功能相似 | SOT-93 |
硅扩散型功率晶体管 Silicon Diffused Power Transistor
|
||
BU2508AW
|
NXP | 功能相似 | TO-247 |
硅扩散型功率晶体管 Silicon Diffused Power Transistor
|
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