Technical parameters/rated voltage (DC): 600 V
Technical parameters/rated current: 4.00 A
Technical parameters/Holding current (Max): 15 mA
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-126
External dimensions/packaging: TO-126
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N6075
|
ON Semiconductor | 功能相似 |
Sensitive gate triac. Silicon bidirectional thyristor. 4A RMS. Peak repetitive off-state voltage 600V.
|
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BTA316-800B
|
NXP | 功能相似 | SOT-78 |
Thyristor TRIAC 800V 150A 3Pin(3+Tab) TO-220AB
|
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