Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 1 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 260 mW
Technical parameters/threshold voltage: 1.1 V
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 0.32A
Technical parameters/Input capacitance (Ciss): 42pF @10V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 0.31 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-323
External dimensions/length: 3 mm
External dimensions/width: 1.4 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-323
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Cut Tape (CT)
Other/Manufacturing Applications: Automotive, Power Management, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Panjit | 功能相似 | SOT-323 |
FAIRCHILD SEMICONDUCTOR 2N7002KW 晶体管, MOSFET, N沟道, 310 mA, 60 V, 1.6 ohm, 10 V, 2.1 V
|
||
|
|
CJ | 功能相似 | SOT-323 |
FAIRCHILD SEMICONDUCTOR 2N7002KW 晶体管, MOSFET, N沟道, 310 mA, 60 V, 1.6 ohm, 10 V, 2.1 V
|
||
2N7002KW
|
UTC | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR 2N7002KW 晶体管, MOSFET, N沟道, 310 mA, 60 V, 1.6 ohm, 10 V, 2.1 V
|
||
2N7002KW
|
LiteOn | 功能相似 | SOT-323 |
FAIRCHILD SEMICONDUCTOR 2N7002KW 晶体管, MOSFET, N沟道, 310 mA, 60 V, 1.6 ohm, 10 V, 2.1 V
|
||
2N7002WT1G
|
ON Semiconductor | 功能相似 | SC-70-3 |
ON SEMICONDUCTOR 2N7002WT1G. 场效应管, MOSFET, N沟道, 60V, 340mA, SC-70, 整卷
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review