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Model BS870
Description DMOSTransistor (N-channel) DMOS Transistors (N-Channel)
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Brand: Diodes
Packaging SOT-23
Delivery time
Packaging method
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6062) Minimum order quantity(1)
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Technical parameters/rated current: 250 mA

Technical parameters/drain source resistance: 5.00 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 8.30 mW

Technical parameters/leakage source breakdown voltage: 60.0 V

Technical parameters/breakdown voltage of gate source: ±20.0 V

Technical parameters/Continuous drain current (Ids): 250 mA

Technical parameters/rise time: 9.00 ns

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: SOT-23

External dimensions/packaging: SOT-23

Other/Product Lifecycle: Obsolete

Compliant with standards/RoHS standards: Non-Compliant

Compliant with standards/REACH SVHC standards: No SVHC

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
BS870-7 BS870-7 Diodes 功能相似 SOT-23-3
N-沟道增强型MOSFET低导通电阻•低栅极阈值电压•低输入电容•开关速度快•低输入/输出漏•铅，卤素和无锑，符合RoHS标准的“绿色”设备（附注1及2）
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