Technical parameters/power supply voltage (DC): 10.0V (min)
Technical parameters/number of output interfaces: 4
Technical parameters/output current: 700 mA
Technical parameters/power supply current: 6 mA
Technical parameters/number of pins: 10
Technical parameters/output current (Max): 700 mA
Technical parameters/output current (Min): 0.7 A
Technical parameters/number of inputs: 4
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/power supply voltage: 10V ~ 36V
Technical parameters/power supply voltage (Max): 36 V
Technical parameters/power supply voltage (Min): 10 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 10
Encapsulation parameters/Encapsulation: PowerSO-10
External dimensions/length: 9.5 mm
External dimensions/width: 7.6 mm
External dimensions/height: 3.65 mm
External dimensions/packaging: PowerSO-10
Physical parameters/operating temperature: -40℃ ~ 125℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Power Management, power management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
VN330SP
|
ST Microelectronics | 功能相似 | PowerSO-10 |
四高侧智能功率固态继电器 QUAD HIGH SIDE SMART POWER SOLID STATE RELAY
|
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VN330SPTR-E
|
ST Microelectronics | 完全替代 | PowerSO-10 |
STMicroelectronics 智能高侧开关提供一个或多个通道 MOSFET 输出开关，用于驱动电感、电容和电阻负载。 Multipower BCD 技术 0.5A 四个独立输出 电源电压范围：9.5 至 35V 内部电流限制 非耗散过电流保护 热关闭 带磁滞的欠压闭锁 针对欠压、过热和过电流的诊断输出 外部异步重置输入 针对过电流可预设延迟 ### 电源和负载开关，Toshiba 集成高侧和低侧智能电源开关电路包含很多功能性和保护特征，如过电流、过电压、短路、断路负载、过温度和电源逆转。 这些高度集成设备利用低接通电阻 MOSFET 晶体管，以最小化功耗并保持高效率。
|
||
VN330SPTR-E
|
ST Microelectronics | 完全替代 | PowerSO-10 |
STMicroelectronics 智能高侧开关提供一个或多个通道 MOSFET 输出开关，用于驱动电感、电容和电阻负载。 Multipower BCD 技术 0.5A 四个独立输出 电源电压范围：9.5 至 35V 内部电流限制 非耗散过电流保护 热关闭 带磁滞的欠压闭锁 针对欠压、过热和过电流的诊断输出 外部异步重置输入 针对过电流可预设延迟 ### 电源和负载开关，Toshiba 集成高侧和低侧智能电源开关电路包含很多功能性和保护特征，如过电流、过电压、短路、断路负载、过温度和电源逆转。 这些高度集成设备利用低接通电阻 MOSFET 晶体管，以最小化功耗并保持高效率。
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