Technical parameters/frequency: 2.11 GHz
Technical parameters/output power: 33 W
Technical parameters/gain: 18.5 dB
Technical parameters/test current: 900 mA
Technical parameters/operating temperature (Max): 225 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/rated voltage: 65 V
Technical parameters/power supply voltage: 28 V
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-502
External dimensions/height: 4.72 mm
External dimensions/packaging: SOT-502
Physical parameters/operating temperature: -65℃ ~ 225℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BLF8G22LS-140J
|
NXP | 完全替代 | SOT-502 |
RF Power Transistor, 2.0 to 2.2GHz, 140W, 18.5dB, 28V, SOT502B, LDMOS
|
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