Technical parameters/drain source resistance: 235 mΩ
Technical parameters/leakage source breakdown voltage: 65 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 65 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-502-3
External dimensions/length: 20.7 mm
External dimensions/width: 9.91 mm
External dimensions/height: 4.72 mm
External dimensions/packaging: SOT-502-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BLF6G20-45,112
|
NXP | 类似代替 | SOT-608 |
Trans RF MOSFET N-CH 65V 13A 3Pin CDFM Bulk
|
||
BLF6G20-45,112
|
Ampleon USA | 类似代替 | SOT-608 |
Trans RF MOSFET N-CH 65V 13A 3Pin CDFM Bulk
|
||
BLF6G20LS-75,112
|
Ampleon USA | 完全替代 | SOT-502 |
Trans RF MOSFET N-CH 65V 18A 3Pin SOT-502B Blister
|
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