Technical parameters/frequency: 1.81GHz ~ 1.88GHz
Technical parameters/output power: 120 W
Technical parameters/gain: 19.2 dB
Technical parameters/test current: 700 mA
Technical parameters/operating temperature (Max): 225 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/rated voltage: 65 V
Technical parameters/power supply voltage: 28 V
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SOT-1275-3
External dimensions/height: 4.01 mm
External dimensions/packaging: SOT-1275-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BLC9G20LS-120VY
|
NXP | 完全替代 |
RF Power Transistor, 1.805 to 1.995GHz, 120W, 19.2dB, 28V, SOT1275-3, LDMOS
|
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