Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.5 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 28A
Technical parameters/rise time: 7.2 ns
Technical parameters/Input capacitance (Ciss): 2600pF @15V(Vds)
Technical parameters/rated power (Max): 69 W
Technical parameters/descent time: 4.6 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2.5W (Ta), 69W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: PG-TDSON-8
External dimensions/length: 5.9 mm
External dimensions/width: 5.15 mm
External dimensions/height: 1.27 mm
External dimensions/packaging: PG-TDSON-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Onboard charger, Mainboard, VRD/VRM
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDMS8662
|
ON Semiconductor | 功能相似 | QFN-8 |
N沟道MOSFET PowerTrench㈢ 30V ， 49A ， 2.0米ヘ N-Channel PowerTrench㈢ MOSFET 30V, 49A, 2.0mヘ
|
||
FDMS8662
|
Fairchild | 功能相似 | Power-56-8 |
N沟道MOSFET PowerTrench㈢ 30V ， 49A ， 2.0米ヘ N-Channel PowerTrench㈢ MOSFET 30V, 49A, 2.0mヘ
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review