Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 20 V
Technical parameters/maximum allowable collector current: 25mA
Technical parameters/minimum current amplification factor (hFE): 40
Technical parameters/Maximum current amplification factor (hFE): 120
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-23
External dimensions/packaging: SOT-23
Other/Minimum Packaging: 3000
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BFT92,215
|
NXP | 功能相似 | SOT-23-3 |
NXP BFT92,215 射频宽带晶体管, PNP, -15V, 5GHZ, 3-SOT-23, 整卷
|
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