Technical parameters/dissipated power: 300 mW
Technical parameters/breakdown voltage (collector emitter): 15 V
Technical parameters/minimum current amplification factor (hFE): 60 @20mA, 6V
Technical parameters/Maximum current amplification factor (hFE): 250
Technical parameters/rated power (Max): 300 mW
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 300 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: TO-253-4
External dimensions/height: 1 mm
External dimensions/packaging: TO-253-4
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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|
Philips | 完全替代 | SC-61B |
晶体管 双极-射频, NPN, 15 V, 9 GHz, 300 mW, 70 mA, 120 hFE
|
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