Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 400 V
Technical parameters/maximum allowable collector current: 2A
Technical parameters/dissipated power (Max): 35000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-66
External dimensions/packaging: TO-66
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N6422
|
Central Semiconductor | 完全替代 | TO-66 |
Power Bipolar Transistor, 2A I(C), 300V V(BR)CEO, PNP, Silicon, TO-66, Metal, 2 Pin,
|
||
BD712
|
ST Microelectronics | 功能相似 | TO-220 |
NPN功率晶体管 NPN POWER TRANSISTORS
|
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