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Model BD810
Description Power transistor PNP silicon POWER TRANSISTORS PNP Silicone
Product QR code
Packaging TO-220-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
1.75  yuan 1.75yuan
5+:
$ 2.3625
25+:
$ 2.1875
50+:
$ 2.0650
100+:
$ 2.0125
500+:
$ 1.9775
2500+:
$ 1.9338
5000+:
$ 1.9163
10000+:
$ 1.8900
Quantity
5+
25+
50+
100+
500+
Price
$2.3625
$2.1875
$2.0650
$2.0125
$1.9775
Price $ 2.3625 $ 2.1875 $ 2.0650 $ 2.0125 $ 1.9775
Start batch production 5+ 25+ 50+ 100+ 500+
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(5558) Minimum order quantity(5)
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Technical parameters/rated voltage (DC): -80.0 V

Technical parameters/rated current: -10.0 A

Technical parameters/polarity: PNP

Technical parameters/dissipated power: 90.0 W

Technical parameters/collector breakdown voltage: 80.0 V

Technical parameters/breakdown voltage (collector emitter): 80 V

Technical parameters/maximum allowable collector current: 10A

Technical parameters/minimum current amplification factor (hFE): 15 @4A, 2V

Technical parameters/rated power (Max): 90 W

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-220-3

External dimensions/packaging: TO-220-3

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Tube

Other/Minimum Packaging: 50

Compliant with standards/RoHS standards: Non-Compliant

Compliant with standards/lead standards: Contains Lead

Customs information/ECCN code: EAR99

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