Technical parameters/rated voltage (DC): -60.0 V
Technical parameters/rated current: -4.00 A
Technical parameters/halogen-free state: Halogen Free
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 40 W
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/maximum allowable collector current: 4A
Technical parameters/minimum current amplification factor (hFE): 750 @2A, 3V
Technical parameters/rated power (Max): 40 W
Technical parameters/DC current gain (hFE): 750
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 40000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-126-3
External dimensions/length: 7.74 mm
External dimensions/width: 2.66 mm
External dimensions/height: 11.04 mm
External dimensions/packaging: TO-126-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BD675G
|
ON Semiconductor | 类似代替 | TO-126-3 |
ON SEMICONDUCTOR BD675G 单晶体管 双极, 达林顿, NPN, 45 V, 1 MHz, 40 W, 4 A, 750 hFE
|
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