Technical parameters/polarity: PNP
Technical parameters/dissipated power: 0.347 W
Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/maximum allowable collector current: 0.1A
Technical parameters/minimum current amplification factor (hFE): 220 @2mA, 5V
Technical parameters/Maximum current amplification factor (hFE): 475
Technical parameters/rated power (Max): 290 mW
Technical parameters/dissipated power (Max): 347 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-1123
External dimensions/packaging: SOT-1123
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 8000
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
Customs Information/Hong Kong Import and Export License: NLR
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SBC857BWT1G
|
ON Semiconductor | 功能相似 | SC-70-3 |
单晶体管 双极, PNP, -45 V, 100 MHz, 150 mW, -100 mA, 220 hFE
|
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