Technical parameters/rated voltage (DC): 45.0 V
Technical parameters/rated current: 100 mA
Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/maximum allowable collector current: 0.1A
Technical parameters/minimum current amplification factor (hFE): 420 @2mA, 5V
Technical parameters/rated power (Max): 500 mW
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-563
External dimensions/packaging: SOT-563
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC847CDXV6T1G
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ON Semiconductor | 完全替代 | SOT-563 |
ON SEMICONDUCTOR BC847CDXV6T1G 双极晶体管阵列, AEC-Q101, 双NPN, 45 V, 500 mW, 100 mA, 420 hFE, SOT-563 新
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