Technical parameters/dissipated power: 250 mW
Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/minimum current amplification factor (hFE): 200 @2mA, 5V
Technical parameters/rated power (Max): 250 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 250 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SOT-363-6
External dimensions/packaging: SOT-363-6
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BCM847BS,115
|
NXP | 功能相似 | TSSOP-6 |
NXP BCM847BS,115 双极晶体管阵列, NPN, 45 V, 300 mW, 100 mA, 290 hFE, SOT-363
|
||
BCM847BS,135
|
Nexperia | 功能相似 | SOT-363-6 |
TSSOP NPN 45V 0.1A
|
||
BCM847BS,135
|
NXP | 功能相似 | SOT-363-6 |
TSSOP NPN 45V 0.1A
|
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