Technical parameters/Maximum forward surge current (Ifsm): 100 mA
Technical parameters/forward current (Max): 70 mA
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SOT-143
External dimensions/length: 3 mm
External dimensions/width: 1.4 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-143
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Philips | 功能相似 | SOT-323 |
Rectifier Diode, Schottky, 2 Element, 0.07A, Silicon
|
||
BAS70-04W
|
Nexperia | 功能相似 |
Rectifier Diode, Schottky, 2 Element, 0.07A, Silicon
|
|||
BAS70-05W
|
Nexperia | 类似代替 | SOT-323 |
肖特基势垒二极管,高达 120mA,Nexperia 高效 超小薄型表面安装封装 经优化适用于低正向电压降和高结温 低电容 可忽略的功率切换损耗 低漏泄电流
|
||
|
|
Philips | 类似代替 | SC-70 |
肖特基势垒二极管,高达 120mA,Nexperia 高效 超小薄型表面安装封装 经优化适用于低正向电压降和高结温 低电容 可忽略的功率切换损耗 低漏泄电流
|
||
|
|
Continental Device | 类似代替 |
肖特基势垒二极管,高达 120mA,Nexperia 高效 超小薄型表面安装封装 经优化适用于低正向电压降和高结温 低电容 可忽略的功率切换损耗 低漏泄电流
|
|||
BAS70-05W
|
NXP | 类似代替 | SOT-323 |
肖特基势垒二极管,高达 120mA,Nexperia 高效 超小薄型表面安装封装 经优化适用于低正向电压降和高结温 低电容 可忽略的功率切换损耗 低漏泄电流
|
||
|
|
HP | 功能相似 |
SILICON, MIXER DIODE, SOT-143, 4Pin
|
|||
HSMS-2825
|
Broadcom | 功能相似 | SOT-143 |
SILICON, MIXER DIODE, SOT-143, 4Pin
|
||
HSMS-2825
|
AVAGO Technologies | 功能相似 | SOT-143 |
SILICON, MIXER DIODE, SOT-143, 4Pin
|
||
SMS7630-011
|
Skyworks Solutions | 功能相似 |
Diode RF Schottky 1V 75mW 2Pin SOD-323
|
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