Technical parameters/forward voltage: 1 V
Technical parameters/reverse recovery time: 6 ns
Technical parameters/Maximum reverse voltage (Vrrm): 100V
Technical parameters/maximum reverse leakage current (Ir): 1uA
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOD-323
External dimensions/packaging: SOD-323
Other/Product Lifecycle: Unknown
Other/Minimum Packaging: 3000
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BAS16H,115
|
NXP | 类似代替 | SOD-123F |
NXP BAS16H,115 二极管 小信号, 单, 100 V, 215 mA, 1.25 V, 4 ns, 4 A
|
||
BAS16HT1
|
Leshan Radio | 功能相似 |
Switching Diode
|
|||
BAS16HT1
|
Zowie Technology | 功能相似 | SOD-323 |
Switching Diode
|
||
BAS16HT1G
|
ON Semiconductor | 类似代替 | SOD-323 |
ON SEMICONDUCTOR BAS16HT1G 二极管 小信号, 单, 85 V, 200 mA, 1.25 V, 6 ns, 500 mA
|
||
BAS16HT1G
|
Rochester | 类似代替 | SOD-323 |
ON SEMICONDUCTOR BAS16HT1G 二极管 小信号, 单, 85 V, 200 mA, 1.25 V, 6 ns, 500 mA
|
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