Technical parameters/forward voltage: 1.25V @150mA
Technical parameters/reverse recovery time: 6 ns
Technical parameters/forward current: 150 mA
Technical parameters/Maximum forward surge current (Ifsm): 2 A
Technical parameters/forward voltage (Max): 1.25 V
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BAS16
|
Multicomp | 功能相似 | SOT-23 |
Diode: switching; SMD; 85V; 200mA; 310mW; Package: tape; SOT23
|
||
BAS16
|
NXP | 功能相似 | SOT-23-3 |
Diode: switching; SMD; 85V; 200mA; 310mW; Package: tape; SOT23
|
||
BAS16
|
Philips | 功能相似 | TO-236 |
Diode: switching; SMD; 85V; 200mA; 310mW; Package: tape; SOT23
|
||
|
|
YONGYUTAI | 功能相似 | SOT-23 |
Diode: switching; SMD; 85V; 200mA; 310mW; Package: tape; SOT23
|
||
BAS16
|
Panjit | 功能相似 | SOT-23 |
Diode: switching; SMD; 85V; 200mA; 310mW; Package: tape; SOT23
|
||
BAS16
|
Siemens Semiconductor | 功能相似 |
Diode: switching; SMD; 85V; 200mA; 310mW; Package: tape; SOT23
|
|||
BAS16
|
EIC | 功能相似 | SOT-23 |
Diode: switching; SMD; 85V; 200mA; 310mW; Package: tape; SOT23
|
||
BAS16
|
Taiwan Semiconductor | 功能相似 | SOT-23 |
Diode: switching; SMD; 85V; 200mA; 310mW; Package: tape; SOT23
|
||
BAS16
|
TRSYS | 功能相似 |
Diode: switching; SMD; 85V; 200mA; 310mW; Package: tape; SOT23
|
|||
BAS16-HE3-18
|
VISHAY | 功能相似 | SOT-23 |
Rectifier Diode, 1Element, 0.15A, 75V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-3
|
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