Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/maximum allowable collector current: 0.5A
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-223
External dimensions/packaging: SOT-223
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
CZTA64TR13
|
Central Semiconductor | 功能相似 |
Power Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin,
|
|||
PZTA63
|
Fairchild | 功能相似 | SOT-223 |
PNP Silicon Darlington Transistors
|
||
PZTA63
|
Siemens Semiconductor | 功能相似 |
PNP Silicon Darlington Transistors
|
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