Technical parameters/frequency: 5GHz ~ 20GHz
Technical parameters/power supply current: 30 mA
Technical parameters/dissipated power: 450 mW
Technical parameters/gain: 13 dB
Technical parameters/testing frequency: 5GHz ~ 20GHz
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 450 mW
Technical parameters/power supply voltage: 5 V
Package parameters/number of pins: 5
Encapsulation parameters/Encapsulation: Die
External dimensions/packaging: Die
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Other/Manufacturing Applications: Aerospace and Defense, Radar
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
HMC-ALH435-SX
|
ADI | 完全替代 | - |
射频放大器 GaAs HEMT WBand lo Noise amp 5 - 20 GHz
|
||
HMC-ALH435-SX
|
Hittite | 完全替代 |
射频放大器 GaAs HEMT WBand lo Noise amp 5 - 20 GHz
|
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