Technical parameters/forward voltage: 875mV @4A
Technical parameters/reverse recovery time: 30 ns
Technical parameters/forward voltage (Max): 875mV @4A
Technical parameters/forward current (Max): 6 A
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: D-5A-2
External dimensions/length: 5.08 mm
External dimensions/width: 2.62 mm
External dimensions/height: 2.62 mm
External dimensions/packaging: D-5A-2
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1N5809US
|
Semtech Corporation | 完全替代 | SMD |
Diode Switching 100V 6A 2Pin SMD
|
||
JANS1N5809US
|
M/A-Com | 功能相似 |
Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon,
|
|||
JANS1N5809US
|
Microsemi | 功能相似 | D-5A-2 |
Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon,
|
||
JANTX1N5809US
|
Sensitron Semiconductor | 完全替代 | MELF-B |
整流器 D MET 6A SFST 100V HR
|
||
JANTX1N5809US
|
Microsemi | 完全替代 | E-MELF |
整流器 D MET 6A SFST 100V HR
|
||
|
|
Sensitron Semiconductor | 功能相似 | MELF-B |
Diode Switching 100V 6A 2Pin E-MELF
|
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