Technical parameters/frequency: 10000 MHz
Technical parameters/rated voltage (DC): 5.50 V
Technical parameters/rated current: 32.0 mA
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 200 mW
Technical parameters/breakdown voltage (collector emitter): 5.5 V
Technical parameters/gain: 11dB ~ 12.5dB
Technical parameters/minimum current amplification factor (hFE): 70 @2mA, 2.7V
Technical parameters/rated power (Max): 200 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 200 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -65℃ ~ 150℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
AT-32033
|
Agilent | 功能相似 | SOT-23 |
RF Small Signal Bipolar Transistor, 0.032A I(C), NPN
|
||
AT-32033
|
Broadcom | 功能相似 | SOT-23 |
RF Small Signal Bipolar Transistor, 0.032A I(C), NPN
|
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