Technical parameters/power supply voltage (DC): 5.00 V, 5.50 V (max)
Technical parameters/clock frequency: 70.0 GHz
Technical parameters/access time: 70.0 ns
Technical parameters/memory capacity: 1000000 B
Technical parameters/power supply voltage: 5 V
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 32
Encapsulation parameters/Encapsulation: PDIP
External dimensions/packaging: PDIP
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
W39F010-70B
|
Winbond Electronics | 功能相似 | DIP |
128K 8 CMOS FLASH MEMORY
|
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