Technical parameters/rated voltage (DC): 500 V
Technical parameters/rated current: 15.0 A
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.33 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 223 W
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/Continuous drain current (Ids): 15.0 mA
Technical parameters/rise time: 12 ns
Technical parameters/Input capacitance (Ciss): 2250pF @25V(Vds)
Technical parameters/rated power (Max): 225 W
Technical parameters/descent time: 8 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 223W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQP13N50
|
Fairchild | 功能相似 | TO-220-3 |
FAIRCHILD SEMICONDUCTOR FQP13N50 晶体管, MOSFET, N沟道, 12.5 A, 500 V, 0.33 ohm, 10 V, 5 V
|
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