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Encapsulation parameters/Encapsulation: TO-263
External dimensions/packaging: TO-263
Other/Gate Voltage Vgs: ±20V
Other/Rds On (Max) @ Id, Vgs: 5.9mΩ@20A,10V
Other/drain source voltage Vds: 100V
Other/working temperature: -55°C~175°C
Other/Packaging/Shell: TO-263
Other/FET types: N-Channel
Other/Pd - power dissipation (Max): 187W
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
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