Technical parameters/drain source resistance: 60 Ω
Technical parameters/dissipated power: 350 mW
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/breakdown voltage: 40 V
Technical parameters/Input capacitance (Ciss): 14pF @20V(Vds)
Technical parameters/rated power (Max): 350 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 350 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SST4119-T1-E3
|
VISHAY | 功能相似 | SOT-23-3 |
JFET N-CH 70V 200uA SOT-23
|
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