Technical parameters/polarity: PNP
Technical parameters/dissipated power: 330 mW
Technical parameters/gain bandwidth product: 40 MHz
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 0.1A
Technical parameters/minimum current amplification factor (hFE): 250
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 330 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 3.05 mm
External dimensions/width: 1.4 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-23-3
Physical parameters/materials: Silicon
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SA1122
|
Kexin | 功能相似 |
2SA1122 PNP三极管 -55V -100mA/-0.1A 250~500 -500mV/-0.5V SOT-23/MPAK marking/标记 CD 低频放大器
|
|||
2SA1122
|
HITACHI | 功能相似 | SOT-23 |
2SA1122 PNP三极管 -55V -100mA/-0.1A 250~500 -500mV/-0.5V SOT-23/MPAK marking/标记 CD 低频放大器
|
||
|
|
Secos | 功能相似 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications
|
|||
2SA1162
|
Toshiba | 功能相似 | SOT-23 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications
|
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