Technical parameters/frequency: 8 MHz
Technical parameters/rated voltage (DC): 150 V
Technical parameters/rated current: 2.00 A
Technical parameters/number of pins: 3
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 1.75 W
Technical parameters/breakdown voltage (collector emitter): 150 V
Technical parameters/maximum allowable collector current: 2A
Technical parameters/DC current gain (hFE): 100
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/operating temperature: 150 ℃
Technical parameters/dissipated power (Max): 1750 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Physical parameters/materials: Silicon
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
Customs information/HTS code: 85412900951
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BD135G
|
ON Semiconductor | 功能相似 | TO-126-3 |
ON SEMICONDUCTOR BD135G 单晶体管 双极, NPN, 45 V, 1.25 W, 1.5 A, 25 hFE 新
|
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