Technical parameters/rated voltage (DC): 10.0 V
Technical parameters/rated current: 35.0 mA
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TSSOP-6
External dimensions/packaging: TSSOP-6
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BFS482
|
Infineon | 功能相似 | SOT-363 |
NPN硅晶体管RF NPN Silicon RF Transistor
|
||
UPA800T
|
California Eastern Laboratories | 功能相似 | SOT-363 |
NPN SILICON HIGH FREQUENCY TRANSISTOR
|
||
UPA800T
|
NEC | 功能相似 | SOT-363 |
NPN SILICON HIGH FREQUENCY TRANSISTOR
|
||
UPA800T-T1
|
NEC | 类似代替 | TSSOP-6 |
射频(RF)双极晶体管 DISC BY CEL 2/02 SO-6 NPN HI-FREQ
|
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