Technical parameters/breakdown voltage (collector emitter): 300 V
Technical parameters/minimum current amplification factor (hFE): 40 @30mA, 10V
Technical parameters/rated power (Max): 1 W
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-237
External dimensions/packaging: TO-237
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards:
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
先科ST | 功能相似 | TO-92-3 |
Trans GP BJT NPN 300V 0.5A 3Pin TO-92 Bulk
|
||
MPSA42
|
Diotec Semiconductor | 功能相似 | TO-92 |
Trans GP BJT NPN 300V 0.5A 3Pin TO-92 Bulk
|
||
MPSA42
|
Nexperia | 功能相似 | TO-92 |
Trans GP BJT NPN 300V 0.5A 3Pin TO-92 Bulk
|
||
MPSA42
|
Samsung | 功能相似 | TO-92-3 |
Trans GP BJT NPN 300V 0.5A 3Pin TO-92 Bulk
|
||
MPSA42
|
Diodes | 功能相似 | TO-92-3 |
Trans GP BJT NPN 300V 0.5A 3Pin TO-92 Bulk
|
||
MPSA42
|
National Semiconductor | 功能相似 |
Trans GP BJT NPN 300V 0.5A 3Pin TO-92 Bulk
|
|||
MPSA42
|
ChendaHang | 功能相似 | TO-92 |
Trans GP BJT NPN 300V 0.5A 3Pin TO-92 Bulk
|
||
MPSA42
|
GE | 功能相似 |
Trans GP BJT NPN 300V 0.5A 3Pin TO-92 Bulk
|
|||
MPSA42
|
VISHAY | 功能相似 |
Trans GP BJT NPN 300V 0.5A 3Pin TO-92 Bulk
|
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