Technical parameters/dissipated power: 1000 mW
Technical parameters/threshold voltage: 3 V
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 5 mm
External dimensions/width: 4 mm
External dimensions/height: 1.5 mm
External dimensions/packaging: SOIC-8
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
CAT1161WI-28-GT3
|
Catalyst | 类似代替 | SOIC |
ON SEMICONDUCTOR CAT1161WI-28-GT3 芯片, 监控器, 3mA, 6V, 8-SOIC
|
||
CAT1161WI-42-GT3
|
ON Semiconductor | 类似代替 | SOIC-8 |
ON SEMICONDUCTOR CAT1161WI-42-GT3 芯片, 微处理器监控器, 3MA, 6V, SOIC-8
|
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