Technical parameters/rated voltage (DC): 52.0 V
Technical parameters/rated current: 9.00 A
Technical parameters/number of output interfaces: 1
Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 0.09 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.74 W
Technical parameters/drain source voltage (Vds): 52 V
Technical parameters/leakage source breakdown voltage: 52 V
Technical parameters/breakdown voltage of gate source: ±15.0 V
Technical parameters/Continuous drain current (Ids): 9.00 A
Technical parameters/rise time: 500 ns
Technical parameters/output current (Max): 9 A
Technical parameters/descent time: 1800 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 1740 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.73 mm
External dimensions/width: 6.22 mm
External dimensions/height: 2.38 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NID9N05CL
|
ON Semiconductor | 类似代替 | TO-252-3 |
55V门限,ESD保护MOSFET
|
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