Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 8 mA
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 350 mW
Technical parameters/drain source voltage (Vds): 30.0 V
Technical parameters/Continuous drain current (Ids): 1.00 nA
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 350 mW
Technical parameters/rated voltage: 30 V
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-226-3
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
National Semiconductor | 功能相似 |
JFET N-CH 30V 8mA TO92
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J305
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ETC1 | 功能相似 |
JFET N-CH 30V 8mA TO92
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Vishay Siliconix | 功能相似 | TO-92 |
JFET N-CH 30V 8mA TO92
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Fairchild | 功能相似 | TO-226-3 |
JFET N-CH 30V 8mA TO92
|
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