Technical parameters/frequency: 110 MHz
Technical parameters/rated voltage (DC): -140 V
Technical parameters/rated current: -4.00 A
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 3 W
Technical parameters/breakdown voltage (collector emitter): 140 V
Technical parameters/maximum allowable collector current: 4A
Technical parameters/minimum current amplification factor (hFE): 100 @1A, 5V
Technical parameters/rated power (Max): 3 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 24000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: TO-261-4
External dimensions/packaging: TO-261-4
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FZT955TC
|
Diodes | 完全替代 | TO-261-4 |
TRANSISTOR PNP HI CURRENT SOT223
|
||
ZX5T955GTA
|
Diodes Zetex | 类似代替 | SOT-223 |
三极管
|
||
ZX5T955GTA
|
Zetex | 类似代替 | SOT-223 |
三极管
|
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