Technical parameters/dissipated power: 950 mW
Technical parameters/input current (Min): 80 µA
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 950 mW
Technical parameters/power supply voltage: 3V ~ 3.6V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 16
Encapsulation parameters/Encapsulation: SOIC-16
External dimensions/packaging: SOIC-16
Physical parameters/operating temperature: -40℃ ~ 85℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SN65LVDS32BD
|
TI | 类似代替 | SOIC-16 |
TEXAS INSTRUMENTS SN65LVDS32BD.. 驱动器, LVDS, 差分线路接收器, 23 mA, -40 °C, 85 °C, 3 V
|
||
SN65LVDS32BDR
|
TI | 类似代替 | SOIC-16 |
高速差分接收器 HIGH-SPEED DIFFERENTIAL RECEIVERS
|
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