Technical parameters/tolerances: ±5 %
Technical parameters/forward voltage: 1.2V @200mA
Technical parameters/dissipated power: 1.3 W
Technical parameters/test current: 20 mA
Technical parameters/voltage regulation value: 12 V
Technical parameters/rated power (Max): 1 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-41
External dimensions/packaging: DO-41
Physical parameters/operating temperature: -65℃ ~ 200℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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|
NXP | 类似代替 | DO-41 |
ON Semiconductor 1N4742ATR 单路 齐纳二极管, 12V 5% 1 W, 2引脚 DO-41封装
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||
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|
TT Electronics | 类似代替 |
BZX85C 系列 12 V 200 mA 通孔 齐纳二极管 - DO-41
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Sunmate | 类似代替 | DO-41 |
BZX85C 系列 12 V 200 mA 通孔 齐纳二极管 - DO-41
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||
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|
Electronics Industry | 类似代替 |
BZX85C 系列 12 V 200 mA 通孔 齐纳二极管 - DO-41
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Surge Components | 类似代替 |
BZX85C 系列 12 V 200 mA 通孔 齐纳二极管 - DO-41
|
|||
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Good-Ark Electronics | 类似代替 |
BZX85C 系列 12 V 200 mA 通孔 齐纳二极管 - DO-41
|
|||
BZX85C12
|
EIC | 类似代替 | DO-204AL |
BZX85C 系列 12 V 200 mA 通孔 齐纳二极管 - DO-41
|
||
BZX85C12
|
Microsemi | 类似代替 |
BZX85C 系列 12 V 200 mA 通孔 齐纳二极管 - DO-41
|
|||
BZX85C12
|
Diotech Electronics | 类似代替 |
BZX85C 系列 12 V 200 mA 通孔 齐纳二极管 - DO-41
|
|||
BZX85C12
|
Taiwan Semiconductor | 类似代替 | DO-41 |
BZX85C 系列 12 V 200 mA 通孔 齐纳二极管 - DO-41
|
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