Technical parameters/dissipated power: 0.5 W
Technical parameters/voltage regulation value: 6.2 V
Technical parameters/regulated current: 5mA
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: DO-35
External dimensions/packaging: DO-35
Other/Minimum Packaging: 10000
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BZX79-C6V2
|
NXP | 功能相似 | DO-35 |
FAIRCHILD SEMICONDUCTOR BZX79-C6V2 单管二极管 齐纳, 6.2 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
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|
|
Philips | 功能相似 |
FAIRCHILD SEMICONDUCTOR BZX79-C6V2 单管二极管 齐纳, 6.2 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
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|
ON Semiconductor | 功能相似 | DO-35 |
FAIRCHILD SEMICONDUCTOR BZX79-C6V2 单管二极管 齐纳, 6.2 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
||
BZX79-C6V2
|
General Semiconductor | 功能相似 |
FAIRCHILD SEMICONDUCTOR BZX79-C6V2 单管二极管 齐纳, 6.2 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
|||
BZX79-C6V2
|
ETC | 功能相似 |
FAIRCHILD SEMICONDUCTOR BZX79-C6V2 单管二极管 齐纳, 6.2 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
|||
|
|
EIC | 功能相似 | DO-35 |
500mW,BZX79C 系列,Fairchild Semiconductor ### 齐纳二极管,Fairchild Semiconductor
|
||
BZX79C6V2
|
Semtech Corporation | 功能相似 | DO-35 |
500mW,BZX79C 系列,Fairchild Semiconductor ### 齐纳二极管,Fairchild Semiconductor
|
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