Technical parameters/dissipated power: 300 mW
Technical parameters/test current: 5 mA
Technical parameters/voltage regulation value: 3.3 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 300 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: SOD-323
External dimensions/length: 1.8 mm
External dimensions/width: 1.35 mm
External dimensions/height: 1.05 mm
External dimensions/packaging: SOD-323
Physical parameters/temperature coefficient: -2.4 mV/K
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BZX384-B3V3
|
Nexperia | 类似代替 | SOD-323 |
300mW,BZX384 系列,NXP Semiconductors 齐纳电压容差为 2% (BZX384-B) 和大约 5% (BZX384-C) 表面安装外壳:SOD-323 (SC-76) ### 齐纳二极管,NXP Semiconductors
|
||
BZX384-B3V3
|
NXP | 类似代替 | SOD-323 |
300mW,BZX384 系列,NXP Semiconductors 齐纳电压容差为 2% (BZX384-B) 和大约 5% (BZX384-C) 表面安装外壳:SOD-323 (SC-76) ### 齐纳二极管,NXP Semiconductors
|
||
BZX384-B3V3
|
Vishay Intertechnology | 类似代替 |
300mW,BZX384 系列,NXP Semiconductors 齐纳电压容差为 2% (BZX384-B) 和大约 5% (BZX384-C) 表面安装外壳:SOD-323 (SC-76) ### 齐纳二极管,NXP Semiconductors
|
|||
BZX384-B3V3,115
|
Nexperia | 类似代替 | SOD-323 |
单管二极管 齐纳, 3.3 V, 300 mW, SOD-323, 2 %, 2 引脚, 150 °C
|
||
PZU3.3B1,115
|
Nexperia | 类似代替 | SOD-323-2 |
SOD-323F 3.225V 550mW
|
||
PZU3.3B2,115
|
Nexperia | 类似代替 | SOD-323-2 |
SOD-323F 3.375V 550mW
|
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